Method of fabricating group-III nitride semiconductor laser device
US8105857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2010 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Aug 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.