Sintered semiconductor material
US8105923B2 · kind B2 · utility
2Cited by
17References
12Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Apr 9, 2004 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Oct 9, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The invention relates to a method for forming a semiconductor material obtained by sintering powders and to a semiconductor material. The method comprises a compression and heat treatment stage such that one part of the powder is melted or becomes viscous. The material can be used in the photovoltaic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.