Hybrid silicon evanescent photodetectors
US8106379B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 12, 2007 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | May 24, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.