Method of manufacturing a magnetic sensor with tilted magnetoresistive structures
US8110119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2008 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Dec 8, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a magnetic field sensor device in one embodiment includes applying a mask on a substrate, performing a wet etching procedure on the substrate for generating at least a first groove having tilted side walls, and depositing at least one layer of magnetoresistive material onto a section of the surface of at least a first tilted side wall of the groove. A method of manufacturing a magnetic field sensor device on a substrate having a plurality of tilted planar sections, each of the tilted planar sections having a surface normal angled with respect to a surface normal of the substrate is also provided. The method includes depositing a magnetoresistive layered structure positioned at each of the tilted planar sections of the substrate, wherein the tilted planar sections are oriented such that a direction of an applied magnetic field in at least one of an x-, y- and z-direction relative to the substrate is detectable based on field-induced resistance changes of the magnetoresistive layered structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.