Method of mask forming and method of three-dimensional microfabrication
US8110322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2005 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Aug 8, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for forming a selective mask on a surface of a layer of AlXGaYIn1-X-YAsZP1-Z or AlXGaYIn1-X-YNZAs1-Z (0≦X≦1, 0≦Y≦1, 0≦Z≦1), which is a method for forming a mask with a minute width suitable for microfabrication in nano-order.(1) An energy beam 4a, 4b is selectively irradiated onto a natural oxide layer 2 formed on the surface of the layer 1 of AlXGaYIn1-X-YAsZP1-Z or AlXGaYIn1-X-YNZAs1-Z. (2) Of the natural oxide layer 2, parts other than parts onto which the energy beam 4a, 4b has been irradiated is removed by heating. (3) The natural oxide layer 2 of the parts onto which the energy beam 4a, 4b has been irradiated is partially removed by heating while alternatively carrying out a rise and fall in heating temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.