Manufacturing method of semiconductor laser element
US8110422B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2008 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Sep 2, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P40/57
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Starting point regions for cutting 8a, 8b extending along lines to cut 5a, 5b are initially formed in an object to be processed 1. The starting point regions for cutting 8b have modified regions 7b formed by irradiating the object 1 with laser light while locating a converging point within the object 1 and are formed in parts extending along the lines to cut 5b excluding portions 34b intersecting the lines to cut 5a. This makes the starting point regions for cutting 8b much less influential when cutting the object 1 from the starting point regions for cutting 8a acting as a start point, whereby bars with precise cleavage surfaces can reliably be obtained. Therefore, it is unnecessary to form a starting point region for cutting along the lines to cut 5b in each of a plurality of bars, whereby the productivity of semiconductor laser elements can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.