Method of manufacturing semiconductor device
US8110442B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Nov 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
A method of manufacturing a thin TFT over a flexible substrate is provided. In formation of a TFT on a surface of a substrate having heat resistance, a liquid repellent film is formed selectively on a surface of the substrate, and an organic film is formed thereover. An element such as a TFT is formed over the organic film. Since the liquid repellent film is formed over the substrate, adhesion between the substrate and the organic film is low; therefore, the element which is formed can be peeled off from the substrate easily. Further, since the element is not transferred to another substrate, a semiconductor device which is thinner than conventional ones can be manufactured. In order to form the liquid repellent film selectively, light exposure of a front surface or a back surface of the substrate provided with a mask, a droplet discharging method, or the like is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.