Nitride-based semiconductor light emitting diode
US8110847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2007 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Mar 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.