Semiconductor device and method for manufacturing the same
US8110865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2010 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/683
Abstract
A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.