Manufacturing process of semiconductor device and semiconductor device
US8110900B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2009 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.