Capacitor
US8111501B2 · kind B2 · utility
4Cited by
9References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 24, 2009 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Feb 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a capacitor includes forming a cylindrical lower electrode structure having an internal support structure on a substrate, forming a dielectric layer on the cylindrical lower electrode structure and the support structure, and forming an upper electrode on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.