Method for forming copper interconnection structures
US8112885B2 · kind B2 · utility
5Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Oct 28, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49204
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.