Vertical hall effect sensor with current focus
US8114684B2 · kind B2 · utility
3Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Jun 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A complementary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped substrate, a doped central island extending downwardly within the doped substrate from an upper surface of the doped substrate, and a first doped outer island extending downwardly within the doped substrate from the upper surface of the doped substrate, the first outer island electrically isolated from the central island within an upper portion of the substrate, and electrically coupled to the central island within a lower portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.