4 transistors 4 shared step and repeat unit cell and 4 transistors 4 shared image sensor including the unit cells
US8115155B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 7, 2007 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Dec 5, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A 4T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including four transistors and a 4T-4S image sensor including the 4T-4S step & repeat unit cell are provided. The 4T-4S step & repeat unit cell includes first and second shared image sensor unit cells. The first shared image sensor unit cell includes first and third photodiodes and five transistors. The second shared image sensor unit cell includes second and fourth photodiodes and five transistors. The second photodiode is disposed over the first photodiode. The third photodiode is disposed at a side of the second photodiode. A terminal of each of the fourth photodiode is connected to a first voltage source. Signals corresponding to images incident onto the first and third photodiodes are output through a first common detection line OUT1. Signals corresponding to images incident onto the second and fourth photodiodes are output through a second common detection line OUT2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.