Silica nanowire comprising silicon nanodots and method of preparing the same
US8115189B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | May 1, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Jun 4, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.