Vertical resonator type light emitting diode
US8115193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2010 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Aug 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8142
Abstract
A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5, and a first reflector layer 3 at its light reflecting side and a second reflector layer 9 at its light emitting side which are formed to sandwich the active later 5 between them, wherein each of the first reflector layer 3 and the second reflector layer 9 is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layer 9 has a number of such pairs which is not less than 1/10 and not more than ⅓ of that which said first reflector layer 3 has. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.