Image display system and manufacturing method thereof
US8115208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Apr 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image display system and manufacturing method are disclosed. According to the present invention, the image display system comprises a substrate, a switching TFT, a driving TFT, a photo sensor and a capacitor. A buffer layer is formed on a substrate. A separation layer is formed in a first area for forming a switching TFT, but no heat sink layer is formed thereon. A heat sink layer is formed on a second area for forming the driving TFT, the photo sensor and the capacitor, and then, the separation layer is formed thereafter. The present invention can form poly silicon layers with different crystal grain sizes on the first area and on the second area in a single laser crystallization process by utilizing the heat sink phenomenon of ELA with or without the heat sink layer. Therefore, the image display system of the present invention can operate with good luminance uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.