Semiconductor light emitting device and fabrication method for the semiconductor light emitting device
US8115222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Mar 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A semiconductor light emitting device includes a first metal layer placed on the p-type semiconductor layer on the substrate, and includes a first pattern width W1; a second metal layer on the first metal layer; a transparent electrode layer on the second metal layer and the p type semiconductor layer, and has an opening patterned with a second pattern width W2 on the second metal layer; an insulating film the transparent electrode layer and the second metal layer, and has an opening patterned with third pattern width W3 on the second metal layer; a reflective stacked film on the insulating film, and has an opening patterned with third pattern width W3 on the second metal layer; a third metal layer on the second metal layer of an opening patterned with the reflective stacked film and third pattern width W3; and a fourth metal layer on the third metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.