Low optical loss electrode structures for LEDs
US8115226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2010 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the electrode and a light emitting semiconductor material. Electrical continuity between the semiconductor material and the metal electrode is provided by an optically transmissive ohmic contact layer, such as a layer of Indium Tin Oxide. The metal electrode thus can be physically separated from the semiconductor material by one or more of the dielectric material and the ohmic contact layer. The dielectric layer can increase total internal reflection of light at the interface between the semiconductor and the dielectric layer, which can reduce absorption of light by the electrode. Such LED can have enhanced utility and can be suitable for uses such as general illumination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.