Semiconductor device
US8115234B2 · kind B2 · utility
13Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | May 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.