Semiconductor device and method for manufacturing the same
US8115248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Apr 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.