Method analyzing threshold voltage distribution in nonvolatile memory
US8116141B2 · kind B2 · utility
31Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | May 11, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A distribution analyzing method for a nonvolatile memory device having memory cells exhibiting overlapping first and second threshold voltage distributions includes; detecting a degree of overlap between the first and second threshold voltage distributions by reading data stored in the memory cells and determining read index data from the read data, and estimating a distribution characteristic for at least one of the overlapping threshold voltage distributions using the read index data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.