Circuit and method for small swing memory signals
US8116149B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2010 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Aug 15, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/413
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Circuits and methods for transmitting and receiving small swing differential voltage data to and from a memory are described. A plurality of memory cells is formed in arrays within a plurality of memory banks. Each memory bank is coupled to a pair of small swing differential voltage global bit lines that extend across the memory. A small signal write driver circuit is coupled to the global bit lines and configured to output a small signal differential voltage on the global bit lines during write cycles. A global sense amplifier is coupled to the global bit line pairs and configured to output a full swing voltage on a data line during a read cycle. Methods for providing small swing global bit line signals to memory cells are disclosed. The use of small swing differential voltage signals across the memory reduces power consumption and shortens memory cycle time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.