Method of forming magnetic memory device
US8119425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2010 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Feb 5, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There are provided a magnetic memory device and a method of forming the magnetic memory device. The method of forming the magnetic memory device includes sequentially forming a first magnetic conductor, a tunnel barrier layer, and a second magnetic conductor on a substrate, forming a mask pattern on the second magnetic conductor, performing a primary etching of the second magnetic conductor by using the mask pattern as an etching mask, forming at least one spacer on sidewalls of the second magnetic conductor formed by the primary etching, and performing a secondary etching of the first magnetic conductor by using the mask pattern and the at least one spacers as an etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.