Method of manufacturing semiconductor nanowire sensor device and semiconductor nanowire sensor device manufactured according to the method
US8119430B2 · kind B2 · utility
1Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Jan 31, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/959
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.