Thin film transistor and method for manufacturing the same
US8119468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Apr 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.