Lateral double-diffused metal oxide semiconductor (LDMOS) transistors

US8119507B2 · kind B2 · utility

Assignee

• Silergy Technology · US

Inventor

• Budong You · Hangzhou City, CN

Key dates

• Filing date: Oct 23, 2008
• Grant date: Feb 21, 2012
• Expiry date: Sep 6, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, an LDMOS transistor can include: (i) an n-doped deep n-well (DNW) region on a substrate; (ii) a gate oxide and a drain oxide between a source region and a drain region of the LDMOS transistor, the gate oxide being adjacent to the source region, the drain oxide being adjacent to the drain region; (iii) a conductive gate over the gate oxide and a portion of the drain oxide; (iv) a p-doped p-body region in the source region; (v) an n-doped drain region in the drain region; (vi) a first n-doped n+ region and a p-doped p+ region adjacent thereto in the p-doped p-body region of the source region; and (vii) a second n-doped n+ region in the drain region.