Semiconductor device and power converter using the same
US8120098B2 · kind B2 · utility
6Cited by
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8Claims
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Key dates
| Filing date | Aug 7, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Nov 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device which can avoid increase of a conduction loss of an IGBT, secure a low noise characteristic and also reduce a switch loss. The switching device is of a trench gate type, in which a drift n− layer 110 is exposed to its main surface to a floating p layer 126 and to trench gates. In other words, the floating p layer 126 is provided within the drift n− layer 110 to be spaced from the trench gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.