Patent · US Active

Protected semiconductor device and method of manufacturing thereof

US8120146B2 · kind B2 · utility

2Cited by

1References

11Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Joachim Stache · Uelzen, DE
Rainer Hoffmann · Langenfeld, DE
Michael Burnus · Buxtehude, DE

Key dates

Filing date	Feb 6, 2007
Grant date	Feb 21, 2012
Priority date	—
Expiry date	Dec 31, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19041
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The semiconductor device (100) comprises at least one semiconductor element (20), a metallization structure comprising a first (31) and a second line (32) and extending thereon a resistor. An electrically insulating protection layer (36) is present on the resistor (35) and is defined in a pattern that is substantially identical to the resistor pattern and has a temperature stability up to a temperature that is at least equal to a deposition temperature of a passivation layer (37) to be deposited thereon so as to cover the metallization structure. Both the resistor (35) and the protection layer (36) are deposited conformally on the metallization structure and any underlying substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.