Patent · US Active

Integrated circuit comprising conductive lines and contact structures and method of manufacturing an integrated circuit

US8120182B2 · kind B2 · utility

0Cited by
0References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 15, 2009
Grant dateFeb 21, 2012
Priority date
Expiry dateSep 20, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B69/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit comprises a first conductive lines and second lines as well as contact structures being in contact with the first and second conductive lines. The first conductive lines are arranged in a first metallization level, and second conductive lines are arranged in a second metallization level arranged above the first metallization level. The second conductive lines are arranged above the contact structures, and a pitch of neighboring contact structures is equal to a pitch of neighboring second conductive lines. The distance between neighboring contact structures is smaller than 100 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.