Integrated circuit comprising conductive lines and contact structures and method of manufacturing an integrated circuit
US8120182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Sep 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit comprises a first conductive lines and second lines as well as contact structures being in contact with the first and second conductive lines. The first conductive lines are arranged in a first metallization level, and second conductive lines are arranged in a second metallization level arranged above the first metallization level. The second conductive lines are arranged above the contact structures, and a pitch of neighboring contact structures is equal to a pitch of neighboring second conductive lines. The distance between neighboring contact structures is smaller than 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.