Quantum cascade laser: bias-neutral design
US8121164B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2010 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Dec 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3407
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quantum cascade laser (QCL) having a bias-neutral design and a semiconductor with multiple layers of AlxIn1-xAs/InyGa1-yAs. The first active region barrier has a thickness of less than fourteen angstroms, and the second active region barrier has a thickness of less than eleven angstroms. The lower active region wavefunction overlaps with each of the injector level wavefunctions. Also, the laser transition is vertical at a bias close to roll-over. The injector level 3′ is above a lower laser level 3, the injector level 2′ is below the lower laser level 3, and the active region level 2 is confined to the active region. The lower laser level 3 is separated from the active region level 2 by the energy of the LO phonon. The remaining active region states and the remaining injector states are either above the lower laser level 3 or significantly below the active region level 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.