Device and process for growing Ga-doped single silicon crystals suitable for making solar cells
US8123855B2 · kind B2 · utility
1Cited by
8References
6Claims
0Family size
Inventors
Key dates
| Filing date | Jul 8, 2008 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Sep 4, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1052
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A device and method for producing Ga doped silicone single crystal with a diameter between 150 and 165 mm and a narrow resistivity distribution range (from 3 Ω·cm to 0.5 Ω·cm). The device is characterized by the use of a shorter heater and a funnel shaped gas flow guide capable of blowing an inert gas such as Ar straight to the crystallization frontier at the interface between outer surface of the nascent single crystal ingot and the surface of the melt of polycrystalline silicone raw materials in a quartz crucible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.