Dendrimer having metallocene core, organic memory device using the same and manufacturing method thereof
US8124238B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2007 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Aug 29, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31855
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a dendrimer, in which metallocene, which is an oxidation-reduction material, is located at a core, and a conjugated dendron is connected to the metallocene core by a linker compound, an organic active layer having the dendrimer, an organic memory device having the organic active layer and a method of manufacturing the organic active layer and the organic memory device. The organic memory device manufactured using a dendrimer having a metallocene core of example embodiments may have a shorter switching time, decreased operation voltage, decreased manufacturing cost and increased reliability, thereby realizing a highly-integrated large-capacity memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.