Method for reshaping silicon surfaces with shallow trench isolation
US8124494B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 16, 2007 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Nov 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.