Methods of forming metal interconnection structures
US8124524B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Mar 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.