Nitride semiconductor light emitting diode
US8124960B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jan 11, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Aug 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
Abstract
A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.