Semiconductor light-emitting element and method for fabrication the same
US8124982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2008 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Oct 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle θ in the c-axis direction preferably satisfies −1°<θ<0°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.