Semiconductor device and etching apparatus
US8125069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Jul 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.