Current perpendicular to plane magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device
US8125744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2008 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Sep 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm2) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.