Magnetic sensor with perpendicular anisotrophy free layer and side shields
US8125746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2009 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Apr 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.