Nonvolatile storage device and method for writing into the same
US8125817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2009 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Feb 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To provide a nonvolatile storage device (100) which is capable of achieving stable operation and includes variable resistance elements. The nonvolatile storage device (100) includes: memory cells (M111, M112, . . .) each of which is provided at three-dimensional cross-points between word lines (WL0, WL1, . . .) and bit lines (BL0, BL1, . . .) and having a resistance value that reversibly changes based on an electrical signal; a row selection circuit-and-driver (103) provided with transistors (103a) each of which applies a predetermined voltage to a corresponding one of the word lines (WL0, WL1, . . .); a column selection circuit-and-driver (104) provided with transistors (104a) each of which applies a predetermined voltage to a corresponding one of the bit lines (BL0, BL1, . . .); and a substrate bias circuit (110) which applies a forward bias voltage to a substrate of such transistors (103a and 104a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.