Mask, method for manufacturing the same, and method for manufacturing semiconductor device
US8129078B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2010 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Mar 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask having mask patterns for the transfer of a desired circuit pattern, a method for manufacturing the mask, and a semiconductor device manufacturing method using the mask, are provided. There are extracted two rectangular aperture patterns which are adjacent each other in an obliquely disposed state with respect to an X axis in an XY plane. The thus-extracted two rectangular aperture patterns are rotated at a certain angle so that a pattern edge corresponding to one side of one of the rectangular aperture patterns and a pattern edge corresponding to one side of the other rectangular aperture pattern are opposed in parallel to each other. The two rectangular aperture patterns thus rotated at a certain angle are then subjected to optical proximity effect correction to form two corrected rectangular aperture patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.