Nitride semiconductor light emitting device and fabrication method thereof
US8129711B2 · kind B2 · utility
475Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 11, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.