Semiconductor, semiconductor device, complementary transistor circuit device
US8129714B2 · kind B2 · utility
27Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2007 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Dec 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/486
Abstract
A semiconductor device including a semiconductor 1, a first electrode 2, an insulating layer 3 interposed between the semiconductor 1 and the first electrode 2, the second electrode 4 which is in contact with the semiconductor 1 and is detached from the first electrode 2, and the third electrode 5 which is in contact with the semiconductor 1 and is detached from the first electrode 2 and the second electrode 4, wherein the semiconductor 1 is provided with the organic semiconductor layer 10 and the oxide semiconductor layer 11.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.