Nitride semiconductor device and method for fabricating the same
US8129748B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2007 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Feb 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.