High-voltage transistor and method for its manufacture
US8129782B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | May 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-voltage transistor is provided with a well of a first conductivity type, which is arranged in a substrate (10) of a second conductivity type, with a source (14), a drain (12), and a gate electrode (18) above a channel region (KN, KP) formed between the source and the drain, wherein several staggered and nested wells (11, 13, 15, 17) of the same conductivity type extend from the source (14) or the drain (12) into the substrate (10) and wherein the doping concentration (log c) of the wells essentially decreases and is smoothed from the substrate surface with increasing depth (T) and also laterally. In this way, field-strength increases and also unintentional breakdown are prevented. Furthermore, a production method is specified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.