Semiconductor device and method of manufacturing the same
US8129816B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 19, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Aug 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A semiconductor device including a semiconductor substrate; an element isolation region formed in the substrate including trenches formed at a first depth and being filled with an element isolation insulating film; an element forming region formed on the substrate and being surrounded by the trenches; a gate electrode formed along a first direction on the element forming region via a gate insulating film, the gate electrode extending over the element insulating film filled the trenches extending along a second direction; a source/drain region having a second depth less than the first depth formed in the element forming region beside the gate electrode and having an exposed surface exposed to a trench sidewall; wherein the upper surface of the element isolation insulating film exclusive of a portion underlying the gate electrode is located at a third depth greater than the second depth and less than the first depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.