Reducing high-frequency signal loss in substrates
US8129817B2 · kind B2 · utility
220Cited by
9References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure includes a semiconductor substrate of a first conductivity type; and a depletion region in the semiconductor substrate. A deep well region is substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type. The depletion region includes a first portion directly over the deep well region and a second portion directly under the deep well region. An integrated circuit device is directly over the depletion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.