Semiconductor device

US8130529B2 · kind B2 · utility

Assignee

• FUJITSU SEMICONDUCTOR LIMITED · JP

Inventor

• Takuji Tanaka · Tachikawa, JP

Key dates

• Filing date: Nov 19, 2008
• Grant date: Mar 6, 2012
• Expiry date: Oct 18, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

A semiconductor device has a pair of gate electrodes extending adjacent to and non-parallel to each other, a source and/or drain region located between the pair of gate electrodes for forming a pair of transistors with the gate electrodes, and a contact electrode disposed between the pair of gate electrodes in contact with the source and/or drain region in a contact area so that the center of the contact area is shifted from the center of the source and/or drain region in a direction along which the distance between the pair of gate electrodes becomes greater.