Magnetic memory structure and operation method
US8130531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2010 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Oct 16, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory structure includes a memory track which has consecutive magnetic domains. Each of the magnetic domains has memory capacity of one bit. A first domain-wall injecting layer intersects and connects a terminal of the memory track and constantly stores a first binary data. A second domain-wall injecting layer against the first domain-wall injecting layer intersects and connects the terminal of the memory track and constantly stores a second binary data different from the first binary data. The memory track and one of the first domain-wall injecting layer and the second domain-wall injecting layer together form a domain wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.